Evolution of Transistor Technology from BJT to FinFET – A study
نویسندگان
چکیده
The presentation of FinFET Technology has opened new sections in Nano-innovation. The arrangement of ultra-thin fin empowers stifled short channel effects. It is an alluring successor to the single gate MOSFET by the righteousness of its prevalent electrostatic properties and relative simplicity of manufacturability. Fin type field-impact transistors (FinFETs) are promising substitutes for mass CMOS at the Nanoscale. FinFETs are double gate device. The two gates of a FinFET can either be shorted for higher execution or autonomously controlled for lower
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